http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200022757-A

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filingDate 2018-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47e9128f7de212c86dacee9f7e6985b0
publicationDate 2020-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20200022757-A
titleOfInvention Building Method of Fluorine Resin Layer in Gas Bombe
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas cylinder for stably maintaining and storing a high purity material used in a semiconductor process, and the like, according to the present invention, such that the inner surface of the gas bombe has an arbitrary surface roughness. A pretreatment step of sanding the inner surface of the substrate; And forming a fluorine resin film on an inner surface of the gas cylinder sanded through the pretreatment step. Including, but the pre-treatment step, the protective jig to cover the gas valve fastening screw thread to prevent or prevent damage to the gas valve fastening screw thread formed in the inlet of the gas cylinder by the sanding treatment the gas Protective jig mounting step mounted to the entrance of the bomb; And a blast gun insertion hole is formed in the protective jig mounted in the protective jig mounting step, and a blast gun is inserted through the blast gun insertion hole so that at least a portion of the blast gun is positioned in an inner space of the gas cylinder. A sanding step in which sand is sprayed or fired from the blast gun to the inner surface of the gas cylinder to perform sanding on the inner surface of the gas cylinder; Since it does not damage the screw thread of the gas cylinder, the peeling of the fluorine resin film formed on the gas cylinder is suppressed, and a technique for stably maintaining the purity of the material stored in the gas cylinder is disclosed.
priorityDate 2018-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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