| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_781c429e4e20536916ff74dcbe1b5417 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6567
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3284 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-453
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-64 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-453 |
| filingDate |
2020-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f47f2a7ce187ec11682e345ca78399ed |
| publicationDate |
2020-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200019654-A |
| titleOfInvention |
Indium zinc oxide (izo) based sputtering target, and method for producing same |
| abstract |
As a sputtering target consisting of In, Zn, and O, the atomic ratio of Zn and In satisfies 0.05 ≦ Zn / (In + Zn) ≦ 0.30, and the standard deviation of the bulk resistivity on the sputtering surface of the target is 0.1 mΩ · cm The sputtering target characterized by the following. Provided are a method for producing an indium oxide-zinc oxide-based oxide (IZO) sintered compact target in which the warpage of the sintered compact is small and the in-plane variation in bulk resistivity due to grinding for curvature reduction is suppressed. |
| priorityDate |
2016-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |