| abstract |
The present invention provides a transistor in which a short-channel effect does not substantially occur even when a channel length is small, and switching characteristics are obtained. Further, a semiconductor device having a high degree of integration using the transistor is provided. A transistor using an oxide semiconductor film substantially free of short channel effects occurring in a transistor using silicon, wherein the channel length is 5 nm or more and less than 60 nm, and the channel width is 5 nm or more and less than 200 nm. At this time, the channel width is made 0.5 to 10 times the channel length. |