http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200015651-A

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filingDate 2020-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4d9be286624dc55ccecf0a4f6e26e04
publicationDate 2020-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20200015651-A
titleOfInvention Semiconductor device
abstract The present invention suppresses the stress on the transistor while suppressing the occurrence of malfunction. A pulse output circuit having a function of outputting a pulse signal and controlling whether or not to set the pulse signal to a high level, the pulse output circuit comprising: a gate of the transistor in a period in which the pulse signal output by the pulse output circuit is at a low level; The potential of is not kept at a constant value, but is intermittently higher than the potential VSS. As a result, the stress on the transistor can be suppressed.
priorityDate 2012-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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