http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200006601-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2020-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78aa83dfb9454443017f3ff090b2314b |
| publicationDate | 2020-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20200006601-A |
| titleOfInvention | Semiconductor device and method for manufacturing the same |
| abstract | Provided is a semiconductor device in which variation in a threshold voltage of a transistor is suppressed. In addition, a semiconductor device in which the drop in the on current of a transistor is suppressed is provided. A gate electrode layer is formed on the substrate, a gate insulating film is formed on the gate electrode layer, an oxide semiconductor film is formed on the gate insulating film, a metal oxide film having a higher reducibility than that of the oxide semiconductor film is formed on the oxide semiconductor film, and a metal oxide is formed. The heat treatment is performed while the film is in contact with the oxide semiconductor film to form a metal film by reducing the metal oxide film, and the metal film is processed to form a source electrode layer and a drain electrode layer. |
| priorityDate | 2011-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 86.