| abstract |
Inorganic particles, organic residues, chemical residues remaining on the semiconductor device after chemical mechanical planarization (CMP), reaction products on the surface due to the interaction of the CMP slurry with the wafer surface and elevated levels of undesirable metals on the surface Formulations are provided that provide a high cleaning effect for the skin. The post-CMP cleaning formulation has a pH <7 and includes a surfactant having at least one organic acid, at least one polymer and a fluoride compound and optionally two sulfonic acid groups. |