http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200001450-A

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filingDate 2019-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50d80b729603c90c2e0cb9a9dd671423
publicationDate 2020-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20200001450-A
titleOfInvention Plasma processing apparatus and plasma processing method
abstract An object of this invention is to provide the plasma processing apparatus and plasma processing method which improve the uniformity of the etching process of a sample, and also the yield. As a means for solving the above problems, a plasma processing apparatus or a plasma processing method for processing a wafer placed on an upper surface of a sample table disposed in a processing chamber inside a vacuum chamber by using a plasma formed in the processing chamber. Matching devices on a plurality of high frequency power supplies for supplying high frequency power to each of the plurality of electrodes disposed in the region on the outside side, and a plurality of matching paths on the plurality of power supply paths electrically connected between the plurality of electrodes and the high frequency power supplies. Adjusting the inductance of the coil of the connection path that electrically connects the points between the coils so that the voltage of the high frequency power becomes maximum or minimum according to the magnitude of the phase difference of the high frequency power flowing through the power supply path. Providing plasma processing apparatus or plasma processing method do.
priorityDate 2018-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 30.