http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190123995-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4e7566f00a7dc09b35e4868c20ad2307 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-13 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-86 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-46 |
filingDate | 2018-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f356f68b084552c6aabcbb4029cb99f |
publicationDate | 2019-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20190123995-A |
titleOfInvention | PREPARATION METHOD OF TWO-DIMENSIONAL In2O3 NANODISCS |
abstract | The present invention relates to a method for synthesizing a novel material having a high conductivity and a large surface area required for an electrode of a supercapacitor. The present invention relates to an indium oxide (In 2 O) through a thermal thermal method in which process conditions such as surfactants are optimized. 3 ) by adjusting the nanodisk shape of the two-dimensional structure with a large surface area and a thin thickness, the material properties are greatly increased, and when applied to the electrode material of the supercapacitor (especially SSC), the specific capacitance, power density, The present invention relates to a method for manufacturing a two-dimensional indium oxide nanodisc, which can greatly improve the device performance such as energy density, rate characteristics, and cycle stability. |
priorityDate | 2018-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.