Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_154f5a8a983d88f296117dcc92946ab4 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
filingDate |
2018-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9750f623c3e11455441493be24255ab3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_006ceab1133b0348418445a426308804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bf0c0d8a75d0a751edf7f13c51c5937 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7659f1889b34f6f6b03c61112b2db789 |
publicationDate |
2019-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20190118921-A |
titleOfInvention |
Etching composition for silicone nitride and method for etching using the same |
abstract |
The silicon nitride film etching composition of the present invention is a phosphoric acid compound; Polyhydric alcohol; And water. The silicon nitride film etching composition has a high selectivity ratio of the silicon nitride film to the silicon oxide film, and can suppress precipitation of the silicon compound. |
priorityDate |
2018-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |