http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190116574-A

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filingDate 2015-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37870608acd277dacbec310cf312d8bd
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publicationDate 2019-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20190116574-A
titleOfInvention Light emitting diode array on a backplane and method of making thereof
abstract A backplane is optionally provided having a stepped horizontal plane and optionally containing a metal interconnect structure. The first conductive bonding structure is formed on the first stepped horizontal plane. The first light emitting device on the first transfer substrate is disposed on the first conductive bonding structure, and the first sub-set of the first light emitting device is bonded to the first conductive bonding structure. Laser irradiation may be employed to selectively isolate the first sub-set of the first light emitting device from the first transfer substrate while the second sub-set of the first light emitting device remains attached to the first transfer substrate. . The additional device on each additional transfer substrate may employ the same method, if there is no additional device on the backplane at the preexisting first light emitting device or the bonding position, where there is no additional device on the backplane, further conductive bonding on the backplane. Can be bonded to the structure.
priorityDate 2014-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 43.