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publicationDate 2019-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20190115912-A
titleOfInvention Semiconductor device
abstract Embodiments include a substrate; A semiconductor structure disposed on the substrate, the semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; A bonding layer disposed between the semiconductor structure and the substrate; A cover layer disposed between the junction layer and the semiconductor structure; And an electrode pad disposed on the cover layer and spaced apart from the semiconductor structure, wherein the semiconductor structure has a side surface of the second conductive semiconductor layer, a side surface of the active layer, and a bottom surface of the first conductive semiconductor layer. The stepped portion further includes an exposed step portion, wherein the stepped portion is disposed on an outer side of the semiconductor structure, and the cover layer is a partial region of the bottom surface of the exposed first conductive semiconductor layer in a region vertically overlapping with the electrode pad. Disclosed is a semiconductor device that extends and is disposed up to an area overlapping with a vertical direction. It starts.
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