| abstract |
The plasma CVD apparatus which can form a high-density film on a base material efficiently, and can form a film also on a base material with electroconductivity is provided. One embodiment of the present invention is a plasma CVD apparatus for forming a film on a substrate by plasma CVD, a chamber for causing the plasma CVD reaction therein, a mechanism disposed in the chamber, and holding the substrate; An antenna arranged in the chamber and generating a plasma, and a power source for applying positive bias to the antenna, wherein the chamber and the holding mechanism are at ground potential. |