| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5ad8562c578b061df7a2c3aee9d0e24 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 |
| filingDate |
2018-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e9edb27e7435dd84ca74d6bcaffc577
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b30b16e86cefbeb5f32efc8e01c4af31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81daf040b06cde8e1d13738bcda5265b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2c445f2527affbab1f402bc79793f52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9675aee749820c5c280246c30b12dc4a |
| publicationDate |
2019-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190108260-A |
| titleOfInvention |
Semiconductor device using interdiffusion and method for manufacturing the same |
| abstract |
A method of manufacturing a semiconductor device according to embodiments may include forming a sacrificial layer on a first substrate including a first dopant atom and a second dopant atom; And forming a germanium (Ge) layer on the sacrificial layer. Here, the germanium layer may include the first dopant atoms diffused from the first substrate by the growth temperature in the forming step. In addition, the germanium layer may further include an annealing step after the germanium layer is grown to include the second dopant atom. In addition, a capping layer may be further formed on at least a portion of the surface of the germanium layer to partially control the polarity of the germanium layer. |
| priorityDate |
2018-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |