http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190098626-A

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filingDate 2018-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20190098626-A
titleOfInvention Method of manufacturing semiconductor device and semiconductor device manufactured by the method
abstract Embodiments may include transferring graphene onto a substrate; Forming a defect in the graphene; Growing a semiconductor layer on the graphene; And separating the semiconductor layer from the substrate, and in the step of forming a defect in the graphene, the graphene having a defect is disclosed to satisfy the following Equation 1. [Relationship 1] 2D / G <1 In the above relational expression 1, 2D is the intensity of peak shown between Raman shift 2600cm -1 to 2800cm -1, G is the intensity of the peak indicates the Raman shift between 1500cm -1 to 1600cm -1.
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