| abstract |
In the present invention, a transistor formed using an oxide semiconductor is sometimes less reliable than a transistor formed using amorphous silicon. Therefore, in this invention, the semiconductor element containing the highly reliable transistor formed using the oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method using a sputtering target containing an oxide semiconductor having a crystallinity degree in which the c-axis direction of the crystal is parallel to the normal vector of the upper surface of the oxide semiconductor. The targets are formed by mixing the raw materials so that the composition ratio can obtain a crystal structure. |