| abstract |
An apparatus and method for processing a substrate in accordance with a PECVD process is described. To change the deposition rate profile across the substrate, the temperature profile of the substrate is adjusted. To change the deposition rate profile across the substrate, the plasma density profile is adjusted. In order to reduce the formation of low quality depositions on the chamber surfaces and to improve plasma density uniformity, the chamber surfaces exposed to the plasma are heated. In situ metrology can be used to monitor the progress of the deposition process and to trigger control actions involving the flow of the substrate temperature profile, plasma density profile, pressure, temperature, and reactants. have. |