| abstract |
A field effect transistor in which uniform application of a semiconductor solution is enabled, hysteresis is reduced, and crack resistance of a gate insulating layer is improved, and a production method excellent in productivity thereof. The present invention relates to a field effect transistor having at least a substrate, a source electrode, a drain electrode and a gate electrode, a semiconductor layer in contact with the source electrode and the drain electrode, and a gate insulating layer insulating the semiconductor layer from the gate electrode The transistor is a field effect transistor characterized in that the gate insulating layer contains a polysiloxane having at least a structural unit represented by the general formula (1). (In the general formula (1), A 1 represents at least two of a carboxyl group, a sulfo group, a thiol group, a phenolic hydroxyl group or a derivative thereof, or at least one functional group or a derivative thereof condensed cyclically in the group A 1 Lt; / RTI > |