http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190084060-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a5ea3215d4ccba707b78c4cf9133da5d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28581 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8128 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28587 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66446 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| filingDate | 2017-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36f34535313179a03dca8565d1664c24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf18b80c57f878fa63017ea2a57e2374 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca25af118f6ac4ddbef47c861324bf13 |
| publicationDate | 2019-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20190084060-A |
| titleOfInvention | Gate structure and method for calculating its gate structure |
| abstract | The present invention relates to a gate structure and a process for producing the gate structure. In particular, the present invention relates to gates that build field effect transistors with reduced thermo-mechanical stress and increased reliability (lower electromicrocation or diffusion of gate metal). The gate structure according to the present invention comprises a substrate 10; An active layer (20) disposed on the substrate; Wherein the intermediate layer 40 has a concave portion 45 extending toward the active layer 20 through the entire intermediate layer 40. The intermediate layer 40 is formed on the active layer 20, Middle layer; And a contact element (50) disposed within the recess (45), wherein the contact element (50) completely fills the recess (45) and extends over the intermediate layer (40) 50) comprises a contact element (50) at least partially resting directly on the intermediate layer (40); The contact element 50 is made of Schottky metal 52; And the contact element 50 is completely surrounded by the Schottky metal 52. |
| priorityDate | 2016-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.