| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f548962093d468be111a5afcea9d1c3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate |
2017-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab5c278d0e1a38381508d8787f3f0223 |
| publicationDate |
2019-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190080290-A |
| titleOfInvention |
Etching compositions and etching method using the same |
| abstract |
The present invention relates to an etching composition, an etching method, and a method of manufacturing a semiconductor device using the same. More particularly, the present invention relates to a method of selectively etching a nitride film while minimizing the etching rate of the oxide film, And a method of manufacturing a semiconductor device including an etching process using the etching composition. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112210378-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220038872-A |
| priorityDate |
2017-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |