| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_716ced455c5edbe3e93066825dc8d4ef |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2018-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3930f7c534b30091d5fb4986357dcb04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fa7d350e29891826d7addae2e28d7fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc85376a5946245a4a1bdf1ae9c9551e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_921a28cf37a2a66946390d2a7bea7609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_097f0241c929a26babdee2d20689734e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f16ec2f6042a3a9891a5d96b88add8be |
| publicationDate |
2019-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190072461-A |
| titleOfInvention |
Selectively etched self-aligned via processes |
| abstract |
Methods of forming self-aligned vias include recessing a first metallization layer comprising a first set of conductive lines extending along a first direction on a first insulating layer on a substrate. A second insulating layer is formed on the first insulating layer. Vias are formed in one of the first conductive lines through the second insulating layer. Devices for forming self-aligned vias and semiconductor devices including self-aligned vias are also disclosed. |
| priorityDate |
2017-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |