http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190067023-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a367c535e8441bb7b4f4277b965224f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_441f7c6829d19d1f693aa6ad677f2e8d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2017-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e7d26fbfd044381a5796757addd9d91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75f7a29cb43a4a3eb47302599004ed1c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6e5e729e74f9d20c03c5ed8f8b23c76 |
| publicationDate | 2019-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20190067023-A |
| titleOfInvention | Method for the formation of low resistive TiAlN thin film electrode by using modified atomic layer deposition method |
| abstract | The present invention relates to a method of manufacturing a TiAlN electrode for use in a semiconductor device, and more particularly, to a method of forming a TiAlN electrode by atomic layer deposition (ALD) Gt; TiAlN < / RTI > For this purpose, in the present invention, when a TiAlN thin film electrode is formed by an ALD method using a super-cycle consisting of a sub-cycle for depositing TiN and AlN, a step of injecting an aluminum precursor Injecting a titanium precursor instead of using an AlN subcycle consisting of injecting a purge gas, injecting a reactant with a plasma, and injecting a purge gas; injecting an aluminum precursor; Wherein the modified AlN subcycle comprises a step of injecting a gas, a step of injecting a reactant together with a plasma, and a step of injecting a purge gas. According to the present invention, by using the modified AlN sub-cycle, the content of Al in the TiAlN electrode thin film can be reduced, and the resistivity is very low as compared with the TiAlN deposited by the ALD method utilizing the super cycle comprising the general TiN and AlN sub- TiAlN electrode thin film can be formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220142783-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022220450-A1 |
| priorityDate | 2017-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.