| abstract |
A silicon nanowire pressure sensor according to an embodiment of the present invention includes a lower substrate having a diaphragm groove formed on a lower surface thereof, an upper substrate coupled to an upper surface of the lower substrate, and a silicon nanowire formed on one surface of the upper substrate, And a diaphragm region formed by etching a center portion of the other surface of the upper substrate with respect to the resistance portion, wherein the diaphragm groove is formed to be larger than the diaphragm region. |