| abstract |
A method of moving an integrated circuit (IC) onto a substrate at a wafer level, such that a coefficient of thermal expansion (CTE) of the circuit layer for different materials is enabled. The method includes providing a wafer having a circuit layer (12), a first major surface (121), a second major surface (122) opposite the first major surface, and a substrate (13) 11). The method includes temporarily engaging a handle (14) to the second major surface, removing a majority of the substrate to expose the first major surface, and removing the first, And bonding the second substrate 16 to one major surface. |