| abstract |
Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. The system and method comprise a substrate 102, a first rare earth oxide layer 104 that epitaxially grows on the substrate, a first metal layer 106 that epitaxially grows on the rare earth oxide layer, and a second metal layer 106 that is epitaxially grown on the first metal layer To grow the layered structure 100 comprising the first semiconductor layer 108. [ |