| abstract |
A semiconductor device structure having dielectric characteristics and a method of forming dielectric characteristics are described herein. In some instances, the dielectric characteristics are formed by a variable temperature annealing process after the ALD process. Dielectric characteristics can have high density, low carbon concentration, and low k value. The dielectric properties formed in accordance with the present invention are improved with respect to etch chemistry, plasma damage, and resistance to physical impact in subsequent processes while maintaining a low k value for the target capacity efficiency. |