| abstract |
The present invention relates to a dry cleaning apparatus and method for removing highly selective silicon oxide, which comprises at least one of an RF power source, a fluorine-containing gas, and a hydrogen-containing gas supplied on- silicon nitride and while suppressing a change in the silicic acid ammonium ((NH 4) 2 SiF 6 ) hexafluoropropane change silicate ammonium at least a portion of the silicon oxide hexafluorophosphate, in the heat treatment process is performed after the reaction process, the heat treatment The silicon oxide is selectively removed by removing the ammonium hexafluorosilicate. According to the present invention, it is possible to selectively etch only silicon oxide while suppressing unnecessary etching of silicon nitride in the process of cleaning a substrate on which silicon oxide and silicon nitride are formed. |