| abstract |
In general, the present disclosure provides conductive features such as metal contacts, vias, lines, and the like and methods of forming such conductive features. In an embodiment of the method, a dielectric layer is formed on the semiconductor substrate. The semiconductor substrate has a source / drain region. An opening is formed through the dielectric layer to the source / drain region. By the same plasma enhanced chemical vapor deposition (PECVD) process, silicide regions are formed on the source / drain regions and barrier layers are formed in the openings along the sidewalls of the dielectric layer. |