http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190056133-A

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filingDate 2017-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5d3c673a6444a8de54ab62d4cd4395f
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publicationDate 2019-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20190056133-A
titleOfInvention Semiconductor device
abstract An embodiment includes a semiconductor structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; A first reflective layer disposed on the first conductive semiconductor layer; A second reflective layer disposed on the second conductive semiconductor layer; An insulating layer disposed on the second reflective layer; And a first electrode disposed on the insulating layer, wherein the first electrode is electrically connected to the first conductive type semiconductor layer, and the insulating layer electrically isolates the first electrode and the second reflective layer from each other A semiconductor device is disclosed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220106019-A
priorityDate 2017-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.