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filingDate 2017-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1ef982532360cf6965e95c748db9cf6
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publicationDate 2019-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20190052496-A
titleOfInvention Semiconductor device and Method of fabricating the same
abstract A semiconductor device and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes forming sequentially first and second epitaxial layers on a semiconductor substrate; Forming a well impurity layer doped with first dopants of a first conductivity type in the second epitaxial layer; Forming a channel layer on the second epitaxial layer including the well impurity layer; Patterning the channel layer and the second epitaxial layer to form active patterns, each of the active patterns including a second epitaxial pattern and a channel pattern on the second epitaxial pattern; Forming a gate electrode across the active patterns; And forming source and drain impurity layers in the channel patterns of the active patterns on both sides of the gate electrode.
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