| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f04d319aaa6e66f240244bc905f452 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02562 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12 |
| filingDate |
2017-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_899e6f142aa4ff3f544575163a0466a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5ee1f909c6372510f9bb9a5106b19d3 |
| publicationDate |
2019-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190048300-A |
| titleOfInvention |
Fabrication of transition metal telluride thin film using microwave heating |
| abstract |
(A) coating a precursor solution comprising a transition metal precursor, a tellurium precursor and an ionic liquid on a conductive substrate to produce a conductive substrate coated with a precursor solution; And (b) irradiating microwave to the conductive substrate coated with the precursor solution to prepare a transition metal telluride thin film on the conductive substrate; And a transition metal telluride thin film containing the transition metal telluride. The thin film of the transition metal telluride thin film of the present invention can be formed quickly and inexpensively in a large area by a solution process using a microwave. The method for preparing the transition metal telluride thin film of the present invention can control the thickness of a thin film and can produce a uniform thin film having excellent crystallinity on a substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115261818-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113136624-A |
| priorityDate |
2017-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |