| abstract |
The semiconductor device according to the present invention includes at least one nanosheet having an active region located on a substrate, a channel region facing the top surface of the active region at a position remote from the top surface of the active region, And a gate insulating layer interposed between the nanosheet and the gate, and a gate insulating layer interposed between the nanosheet and the gate, the gate insulating layer being disposed on the active region on both sides of the nanosheet Source / drain regions. |