http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190026471-A

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filingDate 2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b0f45aa801505c3c1fa05aa672f0504
publicationDate 2019-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20190026471-A
titleOfInvention Epitaxial wafer and method for fabricating the same
abstract An embodiment includes a substrate; An epi layer disposed on the substrate; And a first layer disposed between the substrate and the epi layer, wherein the substrate, the first layer, and the epi layer comprise silicon carbide and a dopant, wherein the doping concentration of the first layer is greater than a doping Concentration epitaxial wafer.
priorityDate 2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.