http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190026471-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate | 2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b0f45aa801505c3c1fa05aa672f0504 |
publicationDate | 2019-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20190026471-A |
titleOfInvention | Epitaxial wafer and method for fabricating the same |
abstract | An embodiment includes a substrate; An epi layer disposed on the substrate; And a first layer disposed between the substrate and the epi layer, wherein the substrate, the first layer, and the epi layer comprise silicon carbide and a dopant, wherein the doping concentration of the first layer is greater than a doping Concentration epitaxial wafer. |
priorityDate | 2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.