| abstract |
The method includes forming three layers. The third layer is the lower layer; An intermediate layer on the lower layer; And an upper layer on the intermediate layer. The top layer comprises a photoresist. The method includes removing an upper layer; And removing the intermediate layer using a chemical solution. The chemical solution does not include potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride. |