| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2017-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4b2fc34bbfc8e6555eec55c09f4dcbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b37089596d83d24715cea606d8baed1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_555d87f5e8143f70075efe3036b279a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71a888515a21cd5d817ff38a26c927b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7de27e01bafa6645d2972f13e4f6610b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbcc771d5a9b3759e31b80b04c76d3a3 |
| publicationDate |
2019-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190021671-A |
| titleOfInvention |
Semiconductor device |
| abstract |
Examples include: a sacrificial layer; A coupling layer disposed on the sacrificial layer; At least one semiconductor structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and disposed on the coupling layer; A first electrode connected to the first conductive semiconductor layer; And a second electrode connected to the second conductive type semiconductor layer, wherein a thickness of the sacrificial layer is 1: 1.5 to 1: 50. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116053368-A |
| priorityDate |
2017-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |