http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190019111-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2019-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate | 2019-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20190019111-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | A transistor using an oxide semiconductor film with an extremely small off current is provided. Further, a semiconductor device with extremely low power consumption is provided by applying the transistor. A base insulating film for releasing oxygen by heat treatment is formed on the substrate and a first oxide semiconductor film is formed on the base insulating film to heat the substrate. Then, a conductive film is formed on the first oxide semiconductor film, and the conductive film is processed to form a source electrode and a drain electrode. Subsequently, immediately after the first oxide semiconductor film is processed to form the second oxide semiconductor film, a gate insulating film covering the source electrode, the drain electrode, and the second oxide semiconductor film is formed, and a gate electrode is formed on the gate insulating film. |
| priorityDate | 2011-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.