| abstract |
The present invention relates to a polishing liquid for CMP for polishing at least a substrate comprising a barrier metal, a metal film and a silicon dioxide film, or at least a substrate including a barrier metal, a metal film, a silicon dioxide film and a low- The surface potentials of the abrasive grains and the metal film at the time of polishing are the same and the surface potentials (mV) of the abrasive grains and the surface potential (mV) of the metal film A product of 250 to 10000, and a pH of 7.0 to 11.0. |