| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_962adbf7d50e742218f3d536a63df612 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B2255-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67721
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B27-08 |
| filingDate |
2017-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_705187f311d849e1d907985dd800ecef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26bd540c97b885c93283a2eef8590722 |
| publicationDate |
2019-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190003943-A |
| titleOfInvention |
Method of manufacturing semiconductor chip with protective film and method of manufacturing semiconductor device |
| abstract |
The present invention is characterized in that after the energy ray hardening protective film forming film 13 is attached to the semiconductor wafer 18, the energy ray is irradiated to the protective film forming film 13 to harden the semiconductor wafer 18, And a method of manufacturing a semiconductor chip (19) having a protective film formed thereon. When the protective film 13 'is irradiated with energy rays to form the protective film 13', the tensile elastic modulus of the protective film 13 'is 500 MPa or more. The present invention also relates to a method of manufacturing a semiconductor device in which a semiconductor chip (19) having a protective film is picked up and the semiconductor chip (19) is connected to a substrate. |
| priorityDate |
2016-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |