| abstract |
Electronic device integration method and integrated electronic device. The method includes forming an electrically conductive trace overlying a substrate; Forming a barrier layer overlying the electrically conductive trace; Forming at least one electrically conductive interconnect on the barrier layer; And forming a bonding layer overlying the electrically conductive traces and / or at least partially surrounding the one or more interconnections. The barrier layer is configured to inhibit the formation of intermetallic compounds between the trace and the interconnect structure, but still allows electrical contact between the trace and the interconnect. The integration method may further include directly coupling the first electronic device to the second electronic device, directly coupling the third electronic device to the second electronic device, and the like. High temperature processing and functional testing of vertically integrated electronic devices can be performed after each stacking sequence. |