| abstract |
A semiconductor device is provided. A semiconductor device includes active patterns extending in a first direction, gate structures extending in a second direction that intersects the active patterns and intersecting the first direction, and are disposed between adjacent gate structures, Active contact patterns disposed between the gate structures and the device isolation film, the active contact patterns being respectively connected to the active contact patterns, the active contact patterns extending in the first direction, And wiring patterns spaced apart from each other by a second distance larger than the first distance in the first direction with the element separation film interposed therebetween . |