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publicationDate 2018-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20180135635-A
titleOfInvention Paste for ohmic contact to p-type semiconductor and method for forming ohmic contact to p-type semiconductor using the same
abstract The present invention relates to a paste for forming an ohmic contact of a P-type semiconductor, which comprises a metal oxide and a binder, and the metal oxide is a rhenium oxide or a molybdenum oxide.
priorityDate 2017-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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