| abstract |
The silica film, the Si wafer, and the hard-working material can be polished at a high speed, and at the same time, the silica-based composite material can be used for polishing the surface of semiconductor elements such as semiconductor substrates and wiring boards, And to provide a fine particle dispersion. The above problems are solved by a silica-based composite fine particle dispersion containing silica-based composite fine particles having sub-crystalline particles mainly composed of crystalline ceria on the surface of mother particles composed mainly of amorphous silica and having the following characteristics. The silica-based composite fine particles have a mass ratio of silica to ceria of 100: 11 to 316. When the silica-based composite fine particles are subjected to X-ray diffraction, only the crystalline phase of ceria is searched. The crystalline silica-based composite fine particles have a crystallite diameter of 10 to 25 nm as measured by X-ray diffraction. |