| abstract |
A silicon-containing film having excellent etching easiness against CF 4 gas and excellent etching resistance against oxygen gas, or silicon having good balance of etching ability for CF 4 gas and etching resistance against oxygen gas by acidic liquid, Containing film forming material for forming a resist film, and a pattern forming method using the same. The film forming material for a resist process of the present invention is a film forming material for a resist process which comprises a siloxane polymer component containing two or more atoms selected from the group consisting of a sulfur atom, a nitrogen atom, a boron atom and a phosphorus atom, Material. The pattern forming method of the present invention is a pattern forming method having a step of forming a silicon-containing film by applying the film-forming material for resist processing onto a substrate, a step of forming a pattern using the silicon-containing film as a mask, and the like. |