http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180132634-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bd0cdbc5c67cf4957ed83c89140748e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B27-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B35-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B5-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B17-10018 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K3-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K3-10 |
| filingDate | 2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2878960bd72c377bcfe990d953a2d0e3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b364e4043cbd36985bf1569ec6605acf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bc97154b832697af3a4d9dd733f4e62 |
| publicationDate | 2018-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20180132634-A |
| titleOfInvention | An infrared absorbing material dispersion, an infrared absorbing material dispersion, a transparent material having an infrared absorbing material dispersion, and an infrared absorbing transparent material |
| abstract | The present invention relates to an infrared absorbing material containing at least one kind of transition metal and at least one kind of element selected from B, C, N, O and the like as a ligand of transition metal. In the lower part of the conduction band, Or a band of the conduction band which is a band in which the d orbit of the transition metal and the ligand p orbit is hybridized is formed. In the upper portion of the valence band, the band occupied by the p orbitals of the ligand or the p orbitals of the ligand and the d orbitals of the transition metal are mixed And the lower band of the conduction band approaches 3.0 eV below the upper band of the valence band in the direction of less than 2 waves which is the high symmetric point of the Brillouin region and the lower band of the conduction band and the upper band of the valence band of 3.0 eV And has a wide gap band structure with a band gap of 3.0 eV or more in the other wave number direction except for the wave number direction close to the center frequency 0.0 > 0eV < / RTI > |
| priorityDate | 2016-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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