http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180131891-A

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filingDate 2017-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2018-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20180131891-A
titleOfInvention Silicon nanowires formed between top and bottom of microscale sensor structures and manufacturing method thereof
abstract Embodiments include forming a first oxide layer on a silicon substrate (S100), etching the silicon substrate to create a recessed region for separating the nanocrystal structure from the microscale sensor structure using the first oxide layer as a mask Forming a second oxide film on the silicon substrate through a thermal oxidation process (S300); etching the recessed region to a predetermined depth in a vertical direction (S400); forming a third oxide film (S500), and etching the silicon substrate (S600) so that the nanowire structure is suspended while the floating nanowire is removed. The micro-scale sensor structure is disposed between the upper and lower ends of the microscale sensor structure &Lt; / RTI &gt;
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Total number of triples: 24.