| abstract |
Embodiments of the present disclosure generally provide methods for forming a capacitor layer or gate insulation layer with low film leakage current and desired film qualities as well as high dielectric constants for display applications. In one embodiment, the thin film transistor structure comprises: a dielectric layer formed on a substrate, the dielectric layer being a zirconium-containing material comprising aluminum; and a gate electrode, a source electrode, and a drain electrode formed on the substrate , A gate electrode, a source electrode, and a drain electrode are formed on or under the dielectric layer. |