| abstract |
A method of fabricating an Ultra Low-k (ELK) intermetal dielectric (IMD) layer includes forming a first IMD layer on a substrate comprising a plurality of layers of dielectric material. An adhesive layer is formed on the first IMD layer. An ELK dielectric layer is formed on the adhesive layer. A protective layer is formed on the ELK dielectric layer. A hard mask is formed on the protective layer and patterned to create a window. The layers under the window are removed to create an opening. The removed layers include the protective layer, the ELK dielectric layer, the adhesive layer, and the first IMD layer. A metal layer is formed in the opening. |