Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7858 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2017-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e98f0efcb5fc83965bec93b5585ac945 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30b051a69f852502e5490577c19e62c7 |
publicationDate |
2018-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20180113887-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
In a method for fabricating a semiconductor device by using a gate replacement technique, a gate space is formed which is constituted by portions of the dielectric material from which the semiconductor fin channel layer is exposed. The surfaces of the dielectric material portions are made hydrophobic. A first dielectric layer is formed on the semiconductor fin channel layer, while maintaining the surfaces of the dielectric material portions hydrophobic. The surface of the formed first dielectric layer is hydrophilic. A first conductive layer is formed over the first dielectric layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A second conductive layer is formed over the first conductive layer and on the hydrophobic surfaces of the dielectric material portions to fill the gate space. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200050391-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069791-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11621343-B2 |
priorityDate |
2017-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |