| abstract |
A method and system for selective silicon anti-reflective coating (SiARC) removal is described. One embodiment of the method includes providing a substrate in a process chamber, the substrate comprising a resist layer, a SiARC layer, a pattern transfer layer, and a lower layer. The method may also include performing a pattern transfer process configured to remove the resist layer and to create a structure comprising a SiARC layer and a portion of the pattern transfer layer on the substrate. In addition, the method may include performing a deformation process on the SiARC layer of the structure, which transforms the SiARC layer into a porous SiARC layer. The method may also include performing a removal process of the porous SiARC layer of the structure, wherein the deformation and removal process of the SiARC layer is configured to meet the target integration target. |