http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180110601-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B1-0233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2018-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e6c3be8f82ba3027cf439479b74715f |
| publicationDate | 2018-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20180110601-A |
| titleOfInvention | Film forming method and vertical thermal processing apparatus |
| abstract | An object of the present invention is to provide a technique capable of reducing particle contamination in forming a film on a substrate to be processed by a vertical type heat treatment apparatus. The wafer W is carried on the wafer boat 65 and carried into the reaction vessel 10 to form the polysilicon film by using the silane gas. Subsequently, the wafer boat 65 is taken out of the reaction vessel 10, and the wafer W is moved and mounted from the wafer boat 65. Thereafter, the empty wafer boat 65 is carried into the reaction vessel 10, Gas cleaning is performed. At this time, the inner surface of the lid 6 is heated to 300 to 350 DEG C by a heater provided on the lid 6. Subsequently, a silicon oxide film (SiO 2 film) is formed in the reaction vessel 10 using an aminosilane gas and an ozone gas in a temperature atmosphere at the time of cleaning. The silicon oxide film can be formed at a low temperature and formed on the inner surface of the lid 6 so that the particles P1 adhered to the inner surface of the lid 6 can be fixed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102359596-B1 |
| priorityDate | 2017-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.