http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180110212-A

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filingDate 2011-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2018-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20180110212-A
titleOfInvention Transistor and display device using the same
abstract The defects of the band gap and the band tail level are reduced as much as possible, thereby reducing the light absorption of energy around the band gap or below the band gap. In this case, by not only optimizing the conditions for fabricating the oxide semiconductor film but also making the oxide semiconductor a substantially semiconducting semiconductor or a semiconductor substantially close to the intrinsic, the defects on which the irradiated light acts are reduced and the effect . That is, even when light having a wavelength of 350 nm is transmitted at 1 × 10 13 photons / cm 2 · sec, the channel region of the transistor is formed using an oxide semiconductor whose absolute value of variation of the threshold voltage is 0.65 V or less.
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